Description: 1 Static Measurements and Parameter Extraction.- 1.1 Introduction.- 1.2 Modeling of MOSFET DC Characteristics.- 1.3 MOSFET Parameter Extraction Methods.- 1.4 Measuring Techniques.- 1.5 Summary and Conclusion.- 2 Small Signal Characterization of VLSI MOSFETs.- 2.1 Introduction.- 2.2 Small Signal AC Model.- 2.3 Channel Frequency Response of MOSFETs.- 2.4 The Split Admittance Technique.- 2.5 Dynamic Transconductance.- 3 Charge Pumping.- 3.1 Introduction.- 3.2 Early Experiments and Basic Principle of CP Measurement.- 3.3 Interface State Generation-Recombination Kinetics.- 3.4 Experimental Techniques.- 3.5 Applications of Charge Pumping.- 3.6 Conclusion.- 4 Deep Level Transient Spectroscopy.- 4.1 Introduction.- 4.2 Generation, Recombination and Trapping Statistics.- 4.3 MOSFET Current Transient Spectroscopy.- 4.4 Signal Analysis.- 4.5 Depletion MOSFET Current Transient Spectroscopy.- 4.6 MOSFET Current DLTS Measurement System.- 5 Individual Interface Traps and Telegraph Noise.- 5.1 Introduction.- 5.2 Observation of Single Carrier Trapping.- 5.3 Experimental Properties of Individual Interface Traps.- 5.4 Interpretation and Modeling.- 5.5 Conclusion.- 6 Characterization of SOI MOSFETs.- 6.1 Introduction.- 6.2 Interest of MOS-SOI Technology.- 6.3 Synthesis of SOI Structures.- 6.4 Wafer Screening by ?-MOSFET Technique.- 6.5 Capacitance and Conductance Techniques.- 6.6 SOI-MOSFETs: Basic Operation and Typical Characteristics.- 6.7 Profiling the Vertical Inhomogeneities.- 6.8 Charge Pumping Technique.- 6.9 Low Frequency Noise.- 6.10 Drain Current Transient Technique.- 6.11 Concluding Remarks.- 7 Modern Analog IC Characterization Techniques.- 7.1 Introduction.- 7.2 Random Mismatch in MOS Transistors.- 7.3 The Extraction of BJT Base Spreading Resistance.- 7.4 MismatchCharacterization of BJT for Statistical CAD.- 7.5 Test Structure for Resistance Matching Properties.- 7.6 MOS Capacitance Technique.

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