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Gallium Nitride (Gan) II Semiconductors and Semimentals (volume57)
by Jacques L. Pankove
This set consists of volume 50 (1998) and volume 57 (1999) from the Academic Press series Semiconductors and Semimetals -- reissued in paperback for students and researchers. Together they contain 27 chapters covering issues related to crystal growth and structure, doping, physical properties, and optoelectronic applications. The first volume begins with a historical survey of research on gallium nitride. Subsequent chapters cover topics such as: metalorganic chemical vapor deposition (MOCVD) of group III nitrides; thermochemistry of III-N superconductors; electronic and optical properties of III-V nitride based quantum wells and superlattices; high pressure studies of defects and impurities in gallium nitride; applications of LEDs and LDs; lasers; growth of III-V nitrides by molecular beam epitaxy; characterization of dopants and deep level defects in gallium nitride; strain in GaN thin films and heterostructures; and GaN and AIGaN ultraviolet detectors.
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