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Mosfet Theory and Design

by B.L. Grung

  • ISBN: 9780195116427
  • ISBN10: 0195116429

Mosfet Theory and Design

by B.L. Grung

  • List Price: $119.95
  • Binding: Paperback
  • Publisher: Oxford Univ Pr
  • Publish date: 12/01/1998
  • ISBN: 9780195116427
  • ISBN10: 0195116429
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Description: PrefaceChartsPhysical ConstantsProperties of Silicon1. Basic MOSFET Theory1.1. Field-Effect Transistors1.2. MOSFET Definitions1.3. Rudimentary Analysis1.4. Current-Voltage Equations1.5. Universal Transfer Characteristics1.6. Transconductance1.7. Inverter Options2. MOS-Capacitor Phenomena2.1. Oxide-Silicon Boundary Conditions2.2. Approximate Field and Potential Profiles2.3. Accurate Band Diagram2.4. Barrier-Height Difference2.5. Interfacial Charge2.6. Oxide Charge2.7. Calculating Threshold Voltage3. MOS-Capacitor Modeling3.1. Exact-Analytic Surface Modeling3.2. Comparing MOS and Junction Capacitances3.3. Small-Signal Equivalent Circuits3.4. Ideal Voltage-Dependent Capacitance3.5. Real Voltage-Dependent Capacitance3.6. Physics of MOS-Capacitance Crossover3.7. Analysis of MOS-Capacitance Crossover4. Improved MOSFET Theory4.1. Channel-Junction Interactions4.2. Ionic-Charge Model4.3. Body Effect4.4. Advanced Long-Channel Models5. SPICE Models5.1. Level-2 Parameters5.2. Level-2 Model5.3. Small-Signal Applications of Model5.4. Large-Signal Applications of Model5.5. Recent MOSFET Models6. MOSFET-BJT Performance Comparisons6.1. Simple-Theory Transconductance Comparison6.2. Subthreshold Transconductance Theory6.3. Calculating Maximum MOSFET gm/Iout6.4. Transconductance versus Input Voltage6.5. Physics of Subthreshold TransconductanceSummaryAppendixes A-GTablesReferencesProblemsSymbol IndexSubject Index
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